Nanoscale electronics based on 2D dopant patterns in silicon

Authors

T. C. Shen, Utah State UniversityFollow
J. S. Kline
T. Schenkel
S. J. Robinson
J. -Y. Ji
C. L. Yang
R. R. Du
J. R. Tucker

Document Type

Article

Journal/Book Title/Conference

The Journal of Vacuum Science and Technology B

Issue

22

Publication Date

2004

Abstract

A nanoscale fabrication process compatible with present Si technology is reported. Preimplanted contact arrays provide external leads for scanning tunneling microscope (STM)-defined dopant patterns. The STM’s low energy electron beam removes hydrogen from H terminated Si(100) surfaces for selective adsorption of PH3 precursor molecules, followed by room temperature Si overgrowth and 500 °C rapid thermal anneal to create activated P-donor patterns in contact with As+-implanted lines. Electrical and magnetoresistance measurements are reported here on 50 and 95 nm-wide P-donor lines, along with Ga-acceptor wires created by focused ion beams, as a means for extending Si device fabrication toward atomic dimensions.

Recommended Citation

T.-C. Shen, J. S. Kline, T. Schenkel, S. J. Robinson, J.-Y. Ji, C. L.Yang, R. R. Du, J. R. Tucker, “Nanoscale electronics based on 2D dopant patterns in silicon”, J. Vac. Sci. Technol. B 22, 3182 (2004).

https://doi.org/10.1116/1.1813466