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Low Temperature Silicon Epitaxy on Hydrogen Terminated Si(100) Surfaces

Document Type

Article

Journal/Book Title/Conference

Physical Review B

Issue

70

Publication Date

2004

Abstract

Si deposition on H terminated Si(001)−2×1 surfaces at temperatures 300–530K is studied by scanning tunneling microscopy. Hydrogen apparently hinders Si adatom diffusion and enhances surface roughening. The post-growth annealing effect is analyzed. Hydrogen is shown to remain on the growth front up to at least 10ML. Si deposition onto the H/Si(001)−3×1 surface at 530K suggests that dihydride units further suppress Si adatom diffusion and increase surface roughness.

https://doi.org/10.1103/PhysRevB.70.115309

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