Nanometer scale MOSFETs and STM patterning on Si

Authors

J. R. Tucker
C. Wang
J. W. Lyding
T. C. Shen, Utah State UniversityFollow
G. C. Abeln

Document Type

Contribution to Book

Journal/Book Title/Conference

Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials

Publication Date

1994

First Page

322

Recommended Citation

J. R. Tucker, C. Wang, J. W. Lyding, T.-C. Shen, and G. C. Abeln, "Nanometer scale MOSFETs and STM patterning on Si," in Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials, Yokohama, 322, (1994).