Nanoscale patterning and oxidation of H-passivated Si(100)-2x1 surfaces with an ultrahigh vacuum scanning tunneling microscope

Authors

J. W. Lyding
T. C. Shen, Utah State UniversityFollow
J. S. Hubaceck
J. R. Tucker
G. C. Abeln

Document Type

Article

Journal/Book Title/Conference

Applied Physics Letters

Issue

64

Publication Date

1994

First Page

2010

Abstract

Nanoscale patterning of the hydrogen terminated Si(100)‐2×1 surface has been achieved with an ultrahigh vacuum scanning tunneling microscope. Patterning occurs when electrons field emitted from the probe locally desorb hydrogen, converting the surface into clean silicon. Linewidths of 1 nm on a 3 nm pitch are achieved by this technique. Local chemistry is also demonstrated by the selective oxidation of the patterned areas. During oxidation, the linewidth is preserved and the surrounding H‐passivated regions remain unaffected, indicating the potential use of this technique in multistep lithography processes.

Recommended Citation

J. W. Lyding, T. C. Shen, J. S. Hubacek, J. R. Tucker, and G. C. Abeln "Nanoscale patterning and oxidation of H-passivated Si(100)-2x1 surfaces with an ultrahigh vacuum scanning tunneling microscope," Appl. Phys. Lett. 64, 2010 (1994).

https://doi.org/10.1063/1.111722