Growth and electrical characterization of ultra-dense phosphorous delta-doping layers in silicon

Authors

T. C. Shen, Utah State UniversityFollow

Document Type

Presentation

Publication Date

10-30-2001

Recommended Citation

Talk at 48th International Symposium of AVS, San Francisco, California, 10/30/2001. “Growth and electrical characterization of ultra-dense phosphorous delta-doping layers in silicon ”