Fabrication and electrical characterization of 2D dopant nanoelectronic devices in Si

Authors

J. S. Kline
S. J. Robinson
J. R. Tucker
J. -Y. Ji
T. C. Shen, Utah State UniversityFollow
C. Yang
R. -R. Du

Document Type

Presentation

Publication Date

11-18-2004

Recommended Citation

Talk at 51st International Symposium of AVS, Anaheim, CA, 11/18/2004. “Fabrication and electrical characterization of 2D dopant nanoelectronic devices in Si,” presented by J. S. Kline, S. J. Robinson, J. R. Tucker, J.-Y. Ji, T.-C. Shen, C. Yang, R.-R. Du.