Fabrication and electrical characterization of 2D dopant nanostructures in Si

Authors

J. S. Kline
K. C. Kim
S. J. Robinson
K. -F. Chen
R. Chan
M. Feng
J. R. Tucker
J. -Y. Ji
T. C. Shen, Utah State UniversityFollow
C. Yang
R. -R. Du

Document Type

Presentation

Publication Date

11-4-2003

Recommended Citation

Talk at 50th International Symposium of AVS, Baltimore, MD, 11/4/2003. “Fabrication and electrical characterization of 2D dopant nanostructures in Si,” presented by J. S. Kline, K. C. Kim, S. J. Robinson, K.-F. Chen, R. Chan, M. Feng, J. R. Tucker, J.-Y. Ji, T.-C. Shen, C. Yang, R.-R. Du.