Impurity concentration profile in irradiation enhanced diffusion experiments

Authors

M A. St. Peters
David Peak, Utah State UniversityFollow
J W. Corbett

Document Type

Article

Journal/Book Title/Conference

Physics Letters A

Volume

49

Issue

2

Publication Date

8-26-1974

First Page

159

Last Page

160

Abstract

Experiments dealing with irradiation enhanced diffusion in semiconductors in which the exciting particles have a range less than the sample thickness are shown to be characterized by nonexponential diffusant concentration profiles as functions of lattice depth.

Comments

Published by Elsevier in Physics Letters A. Publisher PDF is available through link above. Publisher requires a subscription to access article.

Recommended Citation

M. A. St. Peters, D. Peak, J. W. Corbett, Impurity concentration profile in irradiation enhanced diffusion experiments, Physics Letters A, Volume 49, Issue 2, 26 August 1974, Pages 159-160, ISSN 0375-9601, DOI: 10.1016/0375-9601(74)90717-8. (http://www.sciencedirect.com/science/article/pii/0375960174907178)

https://doi.org/10.1016/0375-9601(74)90717-8