Ionization‐enhanced diffusion: Ion implantation in semiconductors

Authors

J Bourgoin
David Peak, Utah State UniversityFollow
J W. Corbett

Document Type

Article

Journal/Book Title/Conference

Journal of Applied Physics

Volume

44

Issue

7

Publication Date

1973

First Page

3022

Last Page

3027

Abstract

A model for the diffusion of implanted interstitials during implantation is introduced and shown to be able to account for the tails observed in ion profiles. It is argued that mechanisms of ionization‐enhanced diffusion can explain some of the anomalous diffusion mechanisms observed in semiconductors. Indications for the existence of such mechanisms in the field of ion implantation in semiconductors are discussed.

Comments

Published by American Institute of Physics in Journal of Applied Physics. Publisher PDF is available for download through link above.

Recommended Citation

Ionization-enhanced diffusion: Ion implantation in semiconductors, J. Bourgoin, J. Appl. Phys. 44, 3022 (1973) ; doi:10.1063/1.1662700 (6 pages)