"Low-fluence Electron Yields of Highly Insulating Materials" by Ryan Hoffman, John R. Dennison et al.
 

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Document Type

Article

Journal/Book Title/Conference

IEEE Transaction on Plasma Science

Volume

36

Issue

5

Publisher

Institute of Electrical and Electronics Engineers

Publication Date

10-1-2008

First Page

2238

Last Page

2245

Abstract

Electron-induced electron yields of high-resistivity high-yield materials - ceramic polycrystalline aluminum oxide and polymer polyimide (Kapton HN) - were made by using a low-fluence pulsed incident electron beam and charge neutralization electron source to minimize charge accumulation. Large changes in the energy-dependent total yield curves and yield decay curves were observed, even for incident electron fluences of < 3 fC/mm2. The evolution of the electron yield as charge accumulates in the material is modeled in terms of electron recapture based on an extended Chung-Everhart model of the electron emission spectrum. This model is used to explain the anomalies measured in highly insulating high-yield materials and to provide a method for determining the limiting yield spectra of uncharged dielectrics. The relevance of these results to spacecraft charging is also discussed.

Comments

http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4660313

Published by IEEE in IEEE Transaction on Plasma Science. Authors' PDF is available for download through the link above.

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