Location
Salt Lake Community College
Start Date
5-10-2004 9:00 AM
Description
The residual stress in 20 nm thick tungsten films deposited on silicon substrate by dc magnetron sputtering is investigated. The sample was held in a continuous flow cryostat, which was capable of achieving temperatures as low as 8 K. The cryostat was mounted on a goniometer to enable the angle-dispersive x-ray diffraction measurements. X-ray diffraction was used to monitor the shift of the α-W {110} Bragg reflection at room temperature and 8 K. From the shift of the {110} Bragg reflection, the total residual stress was estimated at about 6.0 GPa. After applying corrections for the thermal stress in the film, the residual intrinsic stress is estimated at 5.8 GPa.
Residual Stresses in Tungsten Thin Films for Single Photon Detectors
Salt Lake Community College
The residual stress in 20 nm thick tungsten films deposited on silicon substrate by dc magnetron sputtering is investigated. The sample was held in a continuous flow cryostat, which was capable of achieving temperatures as low as 8 K. The cryostat was mounted on a goniometer to enable the angle-dispersive x-ray diffraction measurements. X-ray diffraction was used to monitor the shift of the α-W {110} Bragg reflection at room temperature and 8 K. From the shift of the {110} Bragg reflection, the total residual stress was estimated at about 6.0 GPa. After applying corrections for the thermal stress in the film, the residual intrinsic stress is estimated at 5.8 GPa.