Current Filament Formation in Gold Compensated Silicon Pin Diodes

Authors

H. Baumann, Institut für Angewandte Physik der Universität Münster
T. Pioch, Institut für Medizinische Physik der Universität Münster
H. Dahmen, Institut für Medizinische Physik der Universität Münster
D. Jäger, Institut für Angewandte Physik der Universität Münster

Abstract

In semiconducting materials with current controlled negative differential conductivity an inhomogeneous current density distribution can arise leading to a well-defined spatial pattern in the form of current filaments. Detailed experiments are performed on silicon pin diodes showing a pronounced multistability in the current voltage characteristics. By using the voltage contrast and the electron beam induced voltage (EBIV) methods in a SEM, it is confirmed that each jump in the current is accompanied with the formation or disappearance of a well defined transverse electrical structure between the two contacts as a result of a current filament. This non-uniform state of the material is found to exhibit a clear solitary structure. The observed voltage oscillations are traced back to instabilities of this spatial structure.

Recommended Citation

Baumann, H.; Pioch, T.; Dahmen, H.; and Jäger, D. (1986) "Current Filament Formation in Gold Compensated Silicon Pin Diodes," Scanning Electron Microscopy: Vol. 1986: No. 2, Article 11.
Available at: https://digitalcommons.usu.edu/electron/vol1986/iss2/11