The increasing density of components in integrated circuits imposes severe constraints on conventional electron beam testers. The use of electron detectors consisting of combined electrostatic and magnetic fields has demonstrated improved performance over conventional electrostatic detectors. Such detectors also ease many of the practical difficulties associated with electron beam testing of Ultra Large Scale Integration (ULSI) circuits. A detector using a single pole magnetic lens will be described and compared to detectors which use only electrostatic fields. The single pole lens detector has demonstrated superior performance to the electrostatic detector in terms of local field error and imaging resolution, allowing accurate measurements to be made on sub-micron structures.
Garth, S. C. J. and Spicer, D. F.
"Electron Detectors for Electron-Beam Testing of Ultra Large Scale Integrated Circuits,"
Scanning Electron Microscopy: Vol. 1986
, Article 13.
Available at: https://digitalcommons.usu.edu/electron/vol1986/iss2/13