Scanning Microscopy


Electron-beam-induced current and cathodoluminescence are powerful tools for revealing and characterizing point-like defects, dislocations, and grain boundaries in semiconductor crystals.

This paper reviews the theoretical studies of electron-beam-induced current and cathodoluminescence contrasts from local structure defects of semiconductor crystals (the geometrical aspects of both contrasts, the assessment of the defect properties from the contrast, the evaluation of bulk parameters in the presence of defects, and time-resolved characterization of defects), including recent developments in this area.

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