On-Line Analysis of Electron Back Scatter Diffraction Patterns. I. Texture Analysis of Zone Refined Polysilicon

Authors

D. J. Dingley, University of Bristol
M. Longden, University of Bristol
J. Weinbren, University of Bristol
J. Alderman, Plessey Research (Caswell) Ltd.

Abstract

A technique has been developed for determining crystal orientations on-line from bulk polycrystalline materials using wide angle back scatter electron diffraction patterns. The patterns were imaged on a phosphor screen and viewed using a low light level television camera. A computer generated cursor superimposed on the diffraction pattern, permitted the coordinates of zone axes to be determined. These were interpreted by the computer to yield the crystal orientation. The accuracy of the technique for absolute orientation was shown to be of the order 1° and the precision for relative orientation better than 0.5°. The technique was used to investigate texture and nearest neighbour orientation relationships in polysilicon, recrystallised using a graphite strip heater technique. It was shown that the orientations become less random as the recrystallisation front proceeded along the specimen.

Recommended Citation

Dingley, D. J.; Longden, M.; Weinbren, J.; and Alderman, J. (1987) "On-Line Analysis of Electron Back Scatter Diffraction Patterns. I. Texture Analysis of Zone Refined Polysilicon," Scanning Microscopy: Vol. 1: No. 2, Article 2.
Available at: https://digitalcommons.usu.edu/microscopy/vol1/iss2/2