The ion beam induced charge (IBIC) microscopy technique has recently been developed as a means of imaging the depletion regions of working microelectronic devices beneath their thick metallisation and passivation layers. IBIC microscopy is analogous to electron beam induced current microscopy but has the advantages of a larger analytical depth, lower lateral scattering of the incident focused MeV ion beam and negligible charging effects. These characteristics enable IBIC to image small, buried active device regions without the need to remove the surface layers prior to analysis. The basis of this new technique is outlined and the applications for integrated circuit analysis, characterising upset mechanisms, and for imaging dislocation networks in semiconductor wafers are reviewed.
Breese, M. B. H.
"Ion Beam Induced Charge Microscopy of Integrated Circuits,"
Scanning Microscopy: Vol. 10
, Article 1.
Available at: https://digitalcommons.usu.edu/microscopy/vol10/iss2/1