Electron Beam Nano-Etching in Oxides, Fluorides, Metals and Semiconductors

Authors

C. J. Humphreys, University of Liverpool, United Kingdom
T. J. Bullough, University of Liverpool, United Kingdom
R. W. Devenish, University of Liverpool, United Kingdom
D. M. Maher, AT&T Bell Laboratories, New Jersey
P. S. Turner, Griffith University, Australia

Abstract

Etching, lithography, hole formation, surface restructuring and external machining can all be performed on a nanometre scale using an intense electron beam. Results are presented for a range of different materials which demonstrate the variety of mechanisms by which electron beam nano-etching can occur. For example, in crystalline 13-alumina hole formation occurs by surface indentations growing inwards to join up and form a nanometre diameter hole. In amorphous alumina, on the other hand, hole formation is from the inside-out: oxygen gas bubbles form under the electron beam, coalesce, and burst to leave a well defined nanometre diameter hole. In MgO and Si, holes develop from the electron exit surface: whereas in Al voids form along the irradiated volume, leading eventually to the development of a hole at the electron entrance surface. The potential of electron beam nano-etching to lithography and information storage is demonstrated by showing that the entire contents of the Encyclopaedia Britannica can be written on a pinhead.

Recommended Citation

Humphreys, C. J.; Bullough, T. J.; Devenish, R. W.; Maher, D. M.; and Turner, P. S. (1990) "Electron Beam Nano-Etching in Oxides, Fluorides, Metals and Semiconductors," Scanning Microscopy: Vol. 1990: No. 4, Article 13.
Available at: https://digitalcommons.usu.edu/microscopy/vol1990/iss4/13