The Measurement of Aluminum Surface Diffusion on Si, SiO2, and Si3N4 by Scanning Auger Microscopy

Authors

L. L. Levenson, University of Colorado, Colorado Springs
A. B. Swartzlander, Solar Energy Research Institute
A. Yahashi, Kyoto University
H. Usui, Kyoto University
I. Yamada, Kyoto University

Abstract

The diffusion distance of Al atoms on Si(111), SiO₂, and Si₃N₄ substrates has been measured as a function of substrate temperature. These studies were carried out by depositing Al from an effusive source and from an ionized cluster beam source. Both sources were used in the same apparatus at different times. The deposition was carried out with either a slit mask or a wire mask at the substrate. After the masks were removed, the deposit was examined by optical and electron microscopy, mechanical profilometer, and Auger line scans. The diffusion distance of Al on the substrates was determined from these measurements. The largest diffusion distances measured on all surfaces occured at a substrate temperature of 200°C. The maximum diffusion distance at 200°C is due to a competition between increasing surface mobility and desorption of Al atoms as surface temperature increases.

Recommended Citation

Levenson, L. L.; Swartzlander, A. B.; Yahashi, A.; Usui, H.; and Yamada, I. (1991) "The Measurement of Aluminum Surface Diffusion on Si, SiO2, and Si3N4 by Scanning Auger Microscopy," Scanning Microscopy: Vol. 5: No. 3, Article 10.
Available at: https://digitalcommons.usu.edu/microscopy/vol5/iss3/10