The diffusion distance of Al atoms on Si(111), SiO2, and Si3N4 substrates has been measured as a function of substrate temperature. These studies were carried out by depositing Al from an effusive source and from an ionized cluster beam source. Both sources were used in the same apparatus at different times. The deposition was carried out with either a slit mask or a wire mask at the substrate. After the masks were removed, the deposit was examined by optical and electron microscopy, mechanical profilometer, and Auger line scans. The diffusion distance of Al on the substrates was determined from these measurements. The largest diffusion distances measured on all surfaces occured at a substrate temperature of 200°C. The maximum diffusion distance at 200°C is due to a competition between increasing surface mobility and desorption of Al atoms as surface temperature increases.
Levenson, L. L.; Swartzlander, A. B.; Yahashi, A.; Usui, H.; and Yamada, I.
"The Measurement of Aluminum Surface Diffusion on Si, SiO2, and Si3N4 by Scanning Auger Microscopy,"
Scanning Microscopy: Vol. 5
, Article 10.
Available at: https://digitalcommons.usu.edu/microscopy/vol5/iss3/10