Application of the Nuclear Microprobe to the Imaging of Single Event Upsets in Integrated Circuits

Authors

K. M. Horn, Sandia National Laboratories
B. L. Doyle, Sandia National Laboratories
D. S. Walsh, Sandia National Laboratories
F. W. Sexton, Sandia National Laboratories

Abstract

A new form of microscopy has been developed which produces micron-resolution maps of where single event upsets occur during ion irradiation of integrated circuits. Utilizing a nuclear microprobe, this imaging technique can irradiate, in isolation, individual components of an integrated circuit (e.g. transistor drains, gates, feedback resistors) and measure immediately the effect of a high energy ion strike on circuit performance. This detailed circuit characterization technique provides a precision diagnostic with which to evaluate the design of integrated circuits that are to be used in space or other radiation environments.

Recommended Citation

Horn, K. M.; Doyle, B. L.; Walsh, D. S.; and Sexton, F. W. (1991) "Application of the Nuclear Microprobe to the Imaging of Single Event Upsets in Integrated Circuits," Scanning Microscopy: Vol. 5: No. 4, Article 8.
Available at: https://digitalcommons.usu.edu/microscopy/vol5/iss4/8