A new form of microscopy has been developed which produces micron-resolution maps of where single event upsets occur during ion irradiation of integrated circuits. Utilizing a nuclear microprobe, this imaging technique can irradiate, in isolation, individual components of an integrated circuit (e.g. transistor drains, gates, feedback resistors) and measure immediately the effect of a high energy ion strike on circuit performance. This detailed circuit characterization technique provides a precision diagnostic with which to evaluate the design of integrated circuits that are to be used in space or other radiation environments.
Horn, K. M.; Doyle, B. L.; Walsh, D. S.; and Sexton, F. W.
"Application of the Nuclear Microprobe to the Imaging of Single Event Upsets in Integrated Circuits,"
Scanning Microscopy: Vol. 5
, Article 8.
Available at: https://digitalcommons.usu.edu/microscopy/vol5/iss4/8