Charge Dynamics at the Silicon(001) Surface Studied by Scanning Tunneling Microscopy and Surface Photovoltage

Authors

David G. Cahill, University of Illinois, Urbana
R. J. Hamers, University of Wisconsin, Madison

Abstract

Scanning tunneling microscopy measurements of local surface photovoltage of the Si(001) surface reveal the existence of local charging produced by the tunneling current. Since the tunneling current is confined to a region of near atomic dimensions, charge transport between surface and bulk electronic states is probed with high spatial resolution. The surface charge is enhanced while tunneling at the bonded, type-B atomic step and at specific point defects demonstrating atomic-scale variations in the charge dynamics.

Recommended Citation

Cahill, David G. and Hamers, R. J. (1992) "Charge Dynamics at the Silicon(001) Surface Studied by Scanning Tunneling Microscopy and Surface Photovoltage," Scanning Microscopy: Vol. 6: No. 4, Article 4.
Available at: https://digitalcommons.usu.edu/microscopy/vol6/iss4/4