Strained and Relaxed Semiconducting Silicide Layers Heteroepitaxially Grown on Silicon

Authors

J. Chevrier, Universités d' Aix-Marseille II et III
Le Thanh Vinh, Universités d' Aix-Marseille II et III
J. Derrien, Universités d' Aix-Marseille II et III

Abstract

The semiconducting silicide ß-FeSi₂, which can be grown epitaxially on silicon, is potentially an interesting material for integrated optoelectronic devices. Its semiconducting state stabilised by a solid state Jahn Teller effect is very unusual. Indeed the epitaxial growth of FeSi₂ on silicon (111) in a Molecular Beam Epitaxy (MBE) chamber has revealed the existence of a metallic strained FeSi₂ phase which is the result of a simultaneous electronic and structural transition. The stability and the relaxation of this strained phase which is specifically due to the epitaxy of FeSi₂ on the silicon (111) face will be detailed in this paper. Furthermore, depending on the kinetics of the growth, we shall show that it is possible to epitaxially grow, on silicon, any silicide existing at low temperature (bcc Fe, FeSi, ß-FeSi₂) and to observe dynamical transitions from the strained FeSi2 phase toward epitaxial ß-FeSi₂ and FeSi.

Recommended Citation

Chevrier, J.; Thanh Vinh, Le; and Derrien, J. (1992) "Strained and Relaxed Semiconducting Silicide Layers Heteroepitaxially Grown on Silicon," Scanning Microscopy: Vol. 7: No. 2, Article 2.
Available at: https://digitalcommons.usu.edu/microscopy/vol7/iss2/2