Strained and Relaxed Semiconducting Silicide Layers Heteroepitaxially Grown on Silicon
The semiconducting silicide ß-FeSi2, which can be grown epitaxially on silicon, is potentially an interesting material for integrated optoelectronic devices. Its semiconducting state stabilised by a solid state Jahn Teller effect is very unusual. Indeed the epitaxial growth of FeSi2 on silicon (111) in a Molecular Beam Epitaxy (MBE) chamber has revealed the existence of a metallic strained FeSi2 phase which is the result of a simultaneous electronic and structural transition. The stability and the relaxation of this strained phase which is specifically due to the epitaxy of FeSi2 on the silicon (111) face will be detailed in this paper. Furthermore, depending on the kinetics of the growth, we shall show that it is possible to epitaxially grow, on silicon, any silicide existing at low temperature (bcc Fe, FeSi, ß-FeSi2) and to observe dynamical transitions from the strained FeSi2 phase toward epitaxial ß-FeSi2 and FeSi.
Chevrier, J.; Thanh Vinh, Le; and Derrien, J.
"Strained and Relaxed Semiconducting Silicide Layers Heteroepitaxially Grown on Silicon,"
Scanning Microscopy: Vol. 7:
2, Article 2.
Available at: https://digitalcommons.usu.edu/microscopy/vol7/iss2/2