Scanning Microscopy


This paper considers misfit dislocation nucleation and propagation in dilute magnetic semiconductor heterostructures in the CdTe-ZnTe-MnTe system. It is shown that, where the deposit is in tension, 1/2 < 110 > dislocations with inclined Burgers vectors propagate by glide along interfacial < 110 > directions and may dissociate giving intrinsic stacking faults. In cases where the deposit is in compression, 1/2 < 110 > dislocations show no evidence of dissociation and propagate by extensive cross-slip to give networks of dislocations close to interfacial < 100 > directions.

Evidence for dislocation sources in ZnTe/GaSb films is presented. ZnTe films contained stacking fault pyramids, single Frank faults and a new type of "diamond defect" are present at densities up to about 107 cm-2. Analysis showed that the diamond defects, which were four-sided defects on {111} planes with < 110 > edges, were of vacancy type with 1/3 < 111 > Frank Burgers vectors and intrinsic stacking faults. Although faulted defects showed no tendency to grow by climb, evidence is given for an unfaulted reaction in which a glissile 1/2 < 110 > dislocation is generated. This new model for dislocation nucleation is discussed.

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