Scanning Microscopy
Volume 8, Number 4 (1994)
Articles
Observations on Interactions Between Metal Clusters and III-V Semiconductor Substrates
Theodore D. Lowes
Metastable Reconstructions on Si(111)
Y. -N. Yang and E. D. Williams
X-Ray Absorption Studies of Strain in Epitaxial (Si-Ge) Atomic Layer Superlattice and Alloy Films
T. Tyliszczak, A. P. Hitchcock, Z. H. Lu, J. -M. Baribeau, and T. E. Jackman
Recent Surface Studies Using Biassed Secondary Electron Imaging
Rajendra Persaud, Hisato Noro, Muhammad Azim, Robert H. Milne, and John A. Venables
Interfacial Studies in Semiconductor Heterostructures by X-Ray Diffraction Techniques
J. -M. Baribeau, R. L. Headrick, and P. Maigné
Role of Surface Interactions in Determining Surface Structure and State Formation in III-V Semiconductors
H. E. Ruda and G. P. Jiang
Boron Reconstructed Si(111) Surfaces Produced by B2O3 Decomposition
J. Nogami, S. Yoshikawa, J. C. Glueckstein, and P. Pianetta
Dislocation Nucleation and Propagation in Semiconductor Heterostructures
D. Cherns, S. Mylonas, C. T. Chou, J. Wu, D. E. Ashenford, and B. Lunn
Surface Stress, Morphological Development, and Dislocation Nucleation During SixGe1-x Epitaxy
D. E. Jesson, S. J. Pennycook, J. -M. Baribeau, and D. C. Houghton
Predicting Relaxation in Strained Epitaxial Layers
R. Beanland, D. J. Dunstan, and P. J. Goodhew
ZnSe Heteroepitaxial Growth on Si (100) and GaAs (100)
D. K. Biegelsen, R. D. Bringans, J. E. Northrup, and L. -E. Swartz
Atomic Step Organization in Homoepitaxial Growth on GaAs(111)B Substrates
Leo J. Schowalter, Kai Yang, and Thomas Thundat
Strain Relaxation in Graded InGaAs and InP Buffer Layers on GaAs (001)
K. Eberl, K. Häusler, T. Shitara, Y. Kershaw, and W. Sigle
Strain Relaxation in Compositionally Graded InGaAs/GaAs Heterostructures
Karen L. Kavanagh, Rachel S. Goldman, and Jessica C. P. Chang
Reflection High Energy Electron Diffraction (RHEED) Intensity Oscillations: Growth Modes and Growth Rates: A Critique
B. A. Joyce, X. M. Zhang, J. H. Neave, P. N. Fawcett, M. R. Fahy, K. Sato, and I. Kamiya
Balancing Surface Energy Terms for Stable Growth of Planar Surfaces
M. Albrecht, P. O. Hansson, S. Christiansen, W. Dorsch, H. P. Strunk, and E. Bauser
Light Scattering and Electron Microscopy Study of the Surface Morphology of GaAs Films Grown by Molecular Beam Epitaxy
M. K. Nissen, C. Lavoie, S. Eisebitt, T. Pinnington, and T. Tiedje
Transmission Electron Microscopy, High Resolution X-Ray Diffraction and Rutherford Backscattering Study of Strain Release in InGaAs/GaAs Buffer Layers
G. Salviati, L. Lazzarini, C. Ferrari, P. Franzosi, S. Milita, F. Romanato, M. Berti, M. Mazzer, A. V. Drigo, M. R. Bruni, M. G. Simeone, and N. Gambacorti
Bias Dependence of the Depletion Layer Width in Semi-Insulating GaAs by Charge Collection Scanning Microscopy
A. Castaldini, A. Cavallini, C. del Papa, M. Alietti, C. Canali, F. Nava, and C. Lanzieri
Chemical Composition of GaAs Oxide Layers by Auger In-Depth Profiles and X-Ray Photoelectron Spectroscopy Experiments
J. F. Bresse and C. Cardinaud
Reconstructions of C60 on the Ag(111)1x1 Surface
X. -D. Wang, S. Yamazaki, J. -L. Li, T. Hashizume, H. Shinohara, and T. Sakurai
