Boron Reconstructed Si(111) Surfaces Produced by B2O3 Decomposition

Authors

J. Nogami, University of Wisconsin-Milwaukee
S. Yoshikawa, Stanford University
J. C. Glueckstein, University of Wisconsin-Milwaukee
P. Pianetta, Stanford University

Abstract

Scanning tunneling microscopy has been used to study the growth of boron on the Si(111) surface. Boron was deposited in the form of B₂O₃ which was decomposed by heating the substrate. With this technique, it is possible to control the B coverage, and also to produce the well known √3 x √3 reconstruction at annealing temperatures as low as 600°C. The optimal conditions for the formation of the √3 x √3 surface by B₂O₃ decomposition are given. In addition, the nature of the √3 x √3 surface over a range of B coverages and annealing temperatures is described.

Recommended Citation

Nogami, J.; Yoshikawa, S.; Glueckstein, J. C.; and Pianetta, P. (1994) "Boron Reconstructed Si(111) Surfaces Produced by B2O3 Decomposition," Scanning Microscopy: Vol. 8: No. 4, Article 9.
Available at: https://digitalcommons.usu.edu/microscopy/vol8/iss4/9