Chemical Composition of GaAs Oxide Layers by Auger In-Depth Profiles and X-Ray Photoelectron Spectroscopy Experiments

Authors

J. F. Bresse, France Telecom
C. Cardinaud, Université de Nantes

Abstract

GaAs oxide layers resulting from an oxygen plasma etching have been studied by Auger in-depth profiles and angle-resolved XPS experiments. From the Auger profiles, using the sequential layer sputtering (SLS) treatment, a quantitative determination of thickness and composition of the oxide layers has been performed. A model with several layers has been deduced. From the angle-resolved X-ray photoelectron spectroscopy (XPS) experiments, another model with several layers of different chemical compounds has also been deduced. The oxide layer is non-uniform in thickness and composition. Two or three different oxide layers are formed depending on the probed area. The interface layer is made of a mixture of Ga₂O₃ and elemental arsenic. The intermediate layer consists of an equal mixture of Ga₂O₃ and As₂O₃ with a small amount of As₂O₅. From the Auger experiments, an upper layer of Ga₂O₃ is found in the central part of the wafer, corresponding to a more important loss of arsenic due to a thermal effect.

Recommended Citation

Bresse, J. F. and Cardinaud, C. (1994) "Chemical Composition of GaAs Oxide Layers by Auger In-Depth Profiles and X-Ray Photoelectron Spectroscopy Experiments," Scanning Microscopy: Vol. 8: No. 4, Article 24.
Available at: https://digitalcommons.usu.edu/microscopy/vol8/iss4/24