The early stages of ZnSe heteroepitaxy on Si(100), Si(100):As and GaAs(100) are compared and contrasted, based on results of scanning tunneling microscopy and photoemission spectroscopy. High Se reactivity with the substrate constituents leads to bulk phase formation which is detrimental to heteroepitaxy. As-termination of Si(100) not only passivates the surface, but also provides an ideal buffer for ZnSe overgrowth. Lacking a similar buffer layer, stoichiometric control of the GaAs(100) surface is investigated to find a means for controlled heteroepitaxy.
Biegelsen, D. K.; Bringans, R. D.; Northrup, J. E.; and Swartz, L. -E.
"ZnSe Heteroepitaxial Growth on Si (100) and GaAs (100),"
Scanning Microscopy: Vol. 8
, Article 14.
Available at: https://digitalcommons.usu.edu/microscopy/vol8/iss4/14