Scanning tunneling microscopy has been used to study the growth of boron on the Si(111) surface. Boron was deposited in the form of B2O3 which was decomposed by heating the substrate. With this technique, it is possible to control the B coverage, and also to produce the well known √3 x √3 reconstruction at annealing temperatures as low as 600°C. The optimal conditions for the formation of the √3 x √3 surface by B2O3 decomposition are given. In addition, the nature of the √3 x √3 surface over a range of B coverages and annealing temperatures is described.
Nogami, J.; Yoshikawa, S.; Glueckstein, J. C.; and Pianetta, P.
"Boron Reconstructed Si(111) Surfaces Produced by B2O3 Decomposition,"
Scanning Microscopy: Vol. 8
, Article 9.
Available at: https://digitalcommons.usu.edu/microscopy/vol8/iss4/9