2015 IEEE Conference on Electrical Insulation and Dielectric Phenomena
This work proposes an enhanced statistical model for DC dielectric breakdown properties, which incorporates both shallow and deep defect modes. By incorporating these physics-based concepts into a traditionally empirical model, its accuracy and utility can be extended.
Voltage step-up tests were performed for various polymeric films. The distributions of the breakdown fields are fit to standard two- and three-parameter Weibull distributions. These are extended for a dual defect model, with separate mean energies for shallow and deep level traps, using mixed Weibull distributions.
As shown in Fig 1, such enhanced physics-based statistical models can result in improved fits for various polymeric material data. The merits of generalizations to widely-used Weibull models are discussed.
Theories of DC breakdown, based on distributions of microscopic defects in disordered insulating materials can guide improvements to statistical methods used to characterize breakdown properties.
Allen Andersen and JR Dennison, “Mixed Weibull Distribution Model of DC Dielectric Breakdowns with Dual Defect Modes,” 2015 IEEE Conference on Electrical Insulation and Dielectric Phenomena—(CEIDP 2015), (Ann Arbor, MI, October 18-21, 2015).