Hemispherical Emissivity of V, Nb, Ta, Mo, and W from 300 to 1000 K

Authors

S. X. Cheng
P. Cebe
L. M. Hanssen
D. Mark Riffe, Utah State UniversityFollow
A. J. Sievers

Document Type

Article

Journal/Book Title/Conference

Journal of the Optical Society of America B

Volume

4

Issue

3

Publication Date

1987

First Page

351

Last Page

356

Abstract

The hemispherical emissivities of five transition elements, V, Nb, Ta, Mo, and W, have been measured from 300 to 1000 K, complementing earlier higher-temperature results. These low-temperature data, which are similar, are fitted to a Drude model in which the room-temperature parameters have been obtained from optical measurements and the temperature dependence of the dc resistivity is used as input to calculate the temperature dependence of the emissivity. A frequency-dependent free-carrier relaxation rate is found to have a similar magnitude for all these elements. For temperatures larger than 1200 K the calculated emissivity is always greater than the measured value, indicating that the high-temperature interband features of transition elements are much weaker than those determined from room-temperature measurements.

Comments

Published in Journal of the Optical Society of America B. © 1987 Optical Society of America. Publisher PDF is available for download through link above.

Recommended Citation

"Hemispherical Emissivity of V, Nb, Ta, Mo, and W from 300 to 1000 K," S. X. Cheng, P. Cebe, L. M. Hanssen, D. M. Riffe, and A. J. Sievers, J. Opt. Soc. Am. 68, 351 (1987).