All Physics Faculty Publications
Low Temperature Silicon Epitaxy on Hydrogen Terminated Si(100) Surfaces
Physical Review B
Si deposition on H terminated Si(001)−2×1 surfaces at temperatures 300–530K is studied by scanning tunneling microscopy. Hydrogen apparently hinders Si adatom diffusion and enhances surface roughening. The post-growth annealing effect is analyzed. Hydrogen is shown to remain on the growth front up to at least 10ML. Si deposition onto the H/Si(001)−3×1 surface at 530K suggests that dihydride units further suppress Si adatom diffusion and increase surface roughness.
J.-Y. Ji, T.-C. Shen, “Low Temperature Silicon Epitaxy on Hydrogen Terminated Si(100) Surfaces,” Phys. Rev. B70, 115309 (2004).