Impurity concentration profile in irradiation enhanced diffusion experiments
Physics Letters A
Experiments dealing with irradiation enhanced diffusion in semiconductors in which the exciting particles have a range less than the sample thickness are shown to be characterized by nonexponential diffusant concentration profiles as functions of lattice depth.
M. A. St. Peters, D. Peak, J. W. Corbett, Impurity concentration profile in irradiation enhanced diffusion experiments, Physics Letters A, Volume 49, Issue 2, 26 August 1974, Pages 159-160, ISSN 0375-9601, DOI: 10.1016/0375-9601(74)90717-8. (http://www.sciencedirect.com/science/article/pii/0375960174907178)