Journal of Applied Physics
A model for the diffusion of implanted interstitials during implantation is introduced and shown to be able to account for the tails observed in ion profiles. It is argued that mechanisms of ionization‐enhanced diffusion can explain some of the anomalous diffusion mechanisms observed in semiconductors. Indications for the existence of such mechanisms in the field of ion implantation in semiconductors are discussed.
Ionization-enhanced diffusion: Ion implantation in semiconductors, J. Bourgoin, J. Appl. Phys. 44, 3022 (1973) ; doi:10.1063/1.1662700 (6 pages)