Start Date

5-9-2016 10:15 AM

End Date

5-9-2016 10:45 AM

Description

Precise understanding of the resistivity of metals is an important factor in the optimization of circuit designs and electrical systems. We studied the fabrication of, and measurement of electrical properties of thin films of copper, gold, and nickel. Resistivity measurements of these films were made using 4-°©‐point probes designed and built at Dixie State University (DSU). The making of the films at DSU used thermal deposition and sputtering deposition. The making of the films at Utah Valley University (UVU) used RF sputtering deposition. Analysis of the smoothness of the films was verified with atomic force microscopy (AFM) at UVU. Thicknesses were measured using ellipsometry at BYU and with a stylus profilometer at NIST in Boulder, Colorado. Scanning electron microscopy was also used in the analysis of the films. Resistances similar to bulk properties of the films was seen in thicker films. Thinner films showed an increase in the resistance of each film.

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May 9th, 10:15 AM May 9th, 10:45 AM

Resistance of Thin Films

Precise understanding of the resistivity of metals is an important factor in the optimization of circuit designs and electrical systems. We studied the fabrication of, and measurement of electrical properties of thin films of copper, gold, and nickel. Resistivity measurements of these films were made using 4-°©‐point probes designed and built at Dixie State University (DSU). The making of the films at DSU used thermal deposition and sputtering deposition. The making of the films at Utah Valley University (UVU) used RF sputtering deposition. Analysis of the smoothness of the films was verified with atomic force microscopy (AFM) at UVU. Thicknesses were measured using ellipsometry at BYU and with a stylus profilometer at NIST in Boulder, Colorado. Scanning electron microscopy was also used in the analysis of the films. Resistances similar to bulk properties of the films was seen in thicker films. Thinner films showed an increase in the resistance of each film.