Presenter Information

Rylan Woods, Dixie State University

Start Date

5-2020 12:00 AM

Description

The characterization of resistivity within thin films is paramount for proper integration into modern electronics wherein they show promise as contact materials due to their low contact resistance and high conductivity. Nickel silicide compounds often form in microelectronics at intersections between nickel and silicon, traditionally forming as a variety of intermetallic compounds including NiSi, Ni2Si, Ni3Si, Ni3Si2, and NiSi2. Within this study, nickel silicide thin films ranging in thickness from 25nm to 110nm were synthesized on a silicon wafer substrate utilizing vapor deposition at a temperature of 900°C in low vacuum with pressure in the μTorr range. Analysis of synthesized films yielded a decreasing resistivity in samples with film thickness below 45nm, and for samples with film thickness above 45nm resistivity plateaued with an average resistivity of 23.35 Ω*nm.

Comments

Due to COVID-19, the Symposium was not able to be held this year. However, papers and posters were still submitted.

Available for download on Saturday, May 01, 2021

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May 1st, 12:00 AM

Resistivity of Nickel Silicide Thin Films

The characterization of resistivity within thin films is paramount for proper integration into modern electronics wherein they show promise as contact materials due to their low contact resistance and high conductivity. Nickel silicide compounds often form in microelectronics at intersections between nickel and silicon, traditionally forming as a variety of intermetallic compounds including NiSi, Ni2Si, Ni3Si, Ni3Si2, and NiSi2. Within this study, nickel silicide thin films ranging in thickness from 25nm to 110nm were synthesized on a silicon wafer substrate utilizing vapor deposition at a temperature of 900°C in low vacuum with pressure in the μTorr range. Analysis of synthesized films yielded a decreasing resistivity in samples with film thickness below 45nm, and for samples with film thickness above 45nm resistivity plateaued with an average resistivity of 23.35 Ω*nm.