Low-Fluence Electron Yields of Highly Insulating Materials

Authors

Ryan Hoffmann
JR Dennison, Utah State UnivesityFollow
Clint D. Thomson
Jennifer Albretson

Document Type

Article

Journal/Book Title/Conference

IEEE Trans. on Plasma Sci.

Volume

36

Issue

5

Location

2238-2245

Publication Date

10-2008

Abstract

Electron-induced electron yields of high-resistivity, high-yield materials - ceramic polycrystalline aluminum oxide and the polymer polyimide (Kapton HN), - were made by using a low-fluence, pulsed incident electron beam and charge neutralization electron source to minimize charge accumulation. Large changes in energy-dependent total yield curves and yield decay curves were observed, even for incident electron fluences of <3 fC/mm². The evolution of the electron yield as charge accumulates in the material is modeled in terms of electron re-capture based on an extended Chung-Everhart model of the electron emission spectrum. This model is used to explain anomalies measured in highly insulating, high-yield materials, and to provide a method for determining the limiting yield spectra of uncharged dielectrics. Relevance of these results to spacecraft charging is also discussed.

Recommended Citation

Hoffmann, Ryan; Dennison, JR; Thomson, Clint D.; and Albretson, Jennifer, "Low-Fluence Electron Yields of Highly Insulating Materials" (2008). Journal Articles. Paper 40.
https://digitalcommons.usu.edu/mp_facpub/40