Abstract
We discuss the design, construction, and testing of a cryogenic transimpedance amplifier. This amplifier is a simplified and improved version of our earlier designs. Improvements include lower noise achieved by better shielding, greater bandwidth by reducing stray capacitance in the printed wiring board layout, and reduced heat load to our detector cryostat by remote mounting of the amplifier assembly to a secondary cold stage. A description of the electrical and physical design is given and noise and bandwidth measurements are presented. Room temperature and cryogenic data for the amplifier alone and for a complete assembly including a detector are provided. The selection of certain critical components is discussed. This cryogenic amplifier has been tested using Si:As blocked impurity band (BIB) infrared detectors operating at temperatures between 5 K and 12 K.
Improved Low-Noise Cryogenic Transimpedance Amplifier
We discuss the design, construction, and testing of a cryogenic transimpedance amplifier. This amplifier is a simplified and improved version of our earlier designs. Improvements include lower noise achieved by better shielding, greater bandwidth by reducing stray capacitance in the printed wiring board layout, and reduced heat load to our detector cryostat by remote mounting of the amplifier assembly to a secondary cold stage. A description of the electrical and physical design is given and noise and bandwidth measurements are presented. Room temperature and cryogenic data for the amplifier alone and for a complete assembly including a detector are provided. The selection of certain critical components is discussed. This cryogenic amplifier has been tested using Si:As blocked impurity band (BIB) infrared detectors operating at temperatures between 5 K and 12 K.