Date of Award:

5-2024

Document Type:

Thesis

Degree Name:

Master of Science (MS)

Department:

Electrical and Computer Engineering

Committee Chair(s)

Hongjie Wang

Committee

Hongjie Wang

Committee

Regan Zane

Committee

Nick Roberts

Abstract

In the last several years, the United States has seen a significant increase in sales of electric vehicles. The increase of electric vehicles brings the need for increased availability of public charging stations. In the last two years, satisfaction levels for public chargers have fallen significantly due to unreliability, which is raising concerns for new potential electric vehicle owners. To mitigate the reliability concerns, chargers must be physically understood so they can be consistently monitored to assess their health status. To understand the electric vehicle charging reliability, electrical components must first be understood. In the cutting-edge charging technology, the relatively new wide-band-gap semiconductor devices known as Silicon Carbide MOSFETs have been widely deployed. Given the relative novelty of these devices, their reliability remains unexplored. This thesis presents the use of accelerated lifetime testing, used on previous semiconductor devices, to collect data which may be used in the future to develop models for remaining useful lifetime detection. The chosen method of accelerated lifetime testing is dc power cycling, which causes degradation to the device similar to what is seen after extended use in real systems.

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