Crystal Field Splitting and Charge Flow in the Buckled-Dimer Reconstruction of Si(100)—2× 1

Authors

G. K. Wertheim
D. Mark Riffe, Utah State UniversityFollow
J. E. Rowe
P. H. Citrin

Document Type

Article

Journal/Book Title/Conference

Physical Review Letters

Volume

67

Issue

1

Publication Date

7-1-1991

First Page

120

Last Page

123

Abstract

The effect of the 2×1 reconstruction on the core-electron binding energies of the outermost Si(100) layers has been determined using high-resolution photoemission data. A previously unobserved 190-meV crystal-field splitting is resolved for the up-atoms of the asymmetric surface dimers, whose average core-level shift is -400 meV. The signal from the down-atoms is clearly identified and has a shift of +220 meV. These new findings indicate a charge flow of ∼0.05e from the subsurface to the surface layers, with a substantially larger difference of ∼0.34e between the up-atoms and down-atoms in the dimer.

Comments

Published by American Physical Society in Physical Review Letters. Publisher PDF is available for download through link above.

Recommended Citation

"Crystal Field Splitting and Charge Flow in the Buckled-Dimer Reconstruction of Si(100)—2× 1," G. K. Wertheim, D. M. Riffe, J. E. Rowe, and P. H. Citrin, Phys. Rev. Lett. 67, 120 (1991).