Conduction-Electron Screening in the Bulk and at Low-Index Surfaces of Ta Metal

Authors

D. Mark Riffe, Utah State UniversityFollow
W. Hale
B. Kim
J. L. Erskine

Document Type

Article

Journal/Book Title/Conference

Physical Review B

Volume

51

Issue

16

Publication Date

4-15-1995

First Page

11012

Last Page

11017

Abstract

High-resolution core-level photoemission spectra from Ta(100) have been measured. The well-resolved peak from the first atomic layer allows a separate assessment of bulk and surface-layer screening responses: singularity indices α_B=0.10±0.01 and α₁₀₀=0.205±0.025, respectively, are obtained. The measured surface-atom lifetime broadening of 70±20 meV (compared to 37±5 meV in the bulk) is consistent with published Auger–photoemission coincidence measurements. The result for the bulk singularity index has been applied in the analysis of previous data in order to extract the screening response in the first atomic layer of Ta(111) (α₁₁₁=0.16±0.01) and Ta(110) (α₁₁₀=0.150±0.015). The trend in surface α’s implies an increasingly atomic character for the surface-layer atoms as one proceeds from Ta(110) to Ta(111) to Ta(100).

Comments

Published by American Physical Society in Physical Review B. Publisher PDF is available for download through link above.

Recommended Citation

"Conduction-Electron Screening in the Bulk and at Low-Index Surfaces of Ta Metal," D. M. Riffe, W. Hale, B. Kim, and J. L. Erskine, Phys. Rev. B 51, 11012 (1995).