Measurement of Silicon Surface Recombination Velocity Using Ultrafast Pump-Probe Reflectivityin the Near Infrared

Authors

A. J. Sabbah
D. Mark Riffe, Utah State UniversityFollow

Document Type

Article

Journal/Book Title/Conference

Journal of Applied Physics

Volume

88

Issue

11

Publication Date

2000

First Page

6954

Last Page

6957

Abstract

We demonstrate that ultrafast pump–probe reflectivity measurements from bulk Si samples using a Ti:sapphire femtosecond oscillator (λ=800 nm) can be used to measure the Si surface recombination velocity. The technique is sensitive to recombination velocities greater than ∼10⁴ cm s⁻¹

Comments

Published by American Institute of Physics in Journal of Applied Physics. Publisher PDF is available for download through link above.

Recommended Citation

"Measurement of Silicon Surface Recombination Velocity Using Ultrafast Pump-Probe Reflectivity in the Near Infrared," A. J. Sabbah and D. M. Riffe, J. Appl. Phys 88, 6954 (2000).