Ultra-dense phosphorous delta-layer grown into silicon from PH₃ molecular precursors

Authors

T. C. Shen, Utah State UniversityFollow
J. -Y. Ji
M. A. Zudov
R. -R. Du
J. S. Kline
J. R. Tucker

Document Type

Article

Journal/Book Title/Conference

Physics Letters

Issue

80

Publication Date

2002

First Page

1580

Last Page

1582

Abstract

Phosphorous δ-doping layers were fabricated in silicon by PH3 deposition at room temperature, followed by low-temperature Si epitaxy. Scanning tunneling microscope images indicate large H coverage, and regions of c(2x2) structure. Hall data imply full carrier activation with mobility <40cm2/Vs when the surface coverage is

Recommended Citation

T.-C. Shen, J.-Y. Ji, M. A. Zudov, R.-R. Du, J. S. Kline, J. R. Tucker, “Ultra-dense phosphorous delta-layer grown into silicon from PH3 molecular precursors,” Appl. Phys. Lett. 80, 1580-1582 (2002).

https://doi.org/10.1063/1.1456949