All Physics Faculty Publications

Title

Ultra-dense phosphorous delta-layer grown into silicon from PH3 molecular precursors

Document Type

Article

Journal/Book Title/Conference

Physics Letters

Issue

80

Publication Date

2002

First Page

1580

Last Page

1582

Abstract

Phosphorous δ-doping layers were fabricated in silicon by PH3 deposition at room temperature, followed by low-temperature Si epitaxy. Scanning tunneling microscope images indicate large H coverage, and regions of c(2x2) structure. Hall data imply full carrier activation with mobility <40cm2/Vs when the surface coverage is <0.2 ML. Conductivity measurements show a ln(T) behavior at low temperatures, characteristic of a high-density two-dimensional conductor. Possible future applications to atom-scale electronics and quantum computation are briefly discussed.

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