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Fabricating an all-epitaxial quantum computer

Document Type

Article

Journal/Book Title/Conference

Quantum Information Computation

Issue

1

Publication Date

2001

First Page

129

Last Page

133

Abstract

Scalable silicon quantum computers will require a material perfection that has never been attempted. Ground state wavefunctions for conduction electrons orbiting individual phosphorous donors must be polarized electronically and coupled to nearest neighbors with great precision. Elimination of all randomizing influences can be achieved only with a fully epitaxial structure; and we believe that output circuitry must also be integrated into the qubit arrays in order to achieve the uniformity needed for large-scale integration. A process that could potentially accomplish this will be outlined, based on scanning tunneling microscope (STM) removal of individual hydrogen atoms from the H-terminated silicon surface followed by phosphine dosing and ultra-low-temperature overgrowth. Self-ordering of PH3 molecules onto extended areas of bare silicon should permit patterning of planar single-electron transistors along with P-donor qubits in the same lithographic step. Initial plans for an experiment to characterize exchange coupling under gate control will be described.

https://doi.org/10.26421/QIC1.s-14

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