Electron-stimulated bond rearrangements on the H/Si(100)-3x1 surface

Authors

T. C. Shen, Utah State UniversityFollow
J. A. Steckel
K. D. Jordan

Document Type

Article

Journal/Book Title/Conference

Surface Science

Issue

446

Publication Date

2000

First Page

211

Last Page

218

Recommended Citation

T.-C. Shen, J.A. Steckel, and K.D. Jordan,”Electron-stimulated bond rearrangements on the H/Si(100)-3x1 surface,” Surf. Sci. 446, 211-218 (2000).

https://doi.org/10.1016/S0039-6028(99)01147-4