All Physics Faculty Publications

Silicon nanofabrication and chemical modification by UHV-STM

Document Type

Article

Journal/Book Title/Conference

Materials Research Society Proceedings

Issue

380

Publication Date

1995

First Page

187

Abstract

Patterning on the 10 angstrom size scale has been achieved with a UHV-STM for Si(100)-2×1:H surfaces. Hydrogen passivation serves as a monolayer resist which the STM locally desorbs, exposing clean Si(100)-2×1 for selective chemistry. Two mechanisms have been identified for hydrogen removal by STM electrons: in the field emission regime direct electron stimulated desorption of hydrogen occurs whereas, in the lower energy tunneling regime, hydrogen desorption results from vibrational excitation of the Si-H bond at high tunneling currents. Furthermore, we find that atomic hydrogen is liberated in contrast to molecular hydrogen evolved during thermal desorption. Selective oxidation and nitridation of the STM-patterned areas has been achieved.

https://doi.org/10.1557/PROC-380-187

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