Silicon nanofabrication and chemical modification by UHV-STM

Authors

J. W. Lyding
T. C. Shen, Utah State UniversityFollow
G. C. Abeln
C. Wang
E. T. Foley
J. R. Tucker

Document Type

Article

Journal/Book Title/Conference

Materials Research Society Proceedings

Issue

380

Publication Date

1995

First Page

187

Abstract

Patterning on the 10 angstrom size scale has been achieved with a UHV-STM for Si(100)-2×1:H surfaces. Hydrogen passivation serves as a monolayer resist which the STM locally desorbs, exposing clean Si(100)-2×1 for selective chemistry. Two mechanisms have been identified for hydrogen removal by STM electrons: in the field emission regime direct electron stimulated desorption of hydrogen occurs whereas, in the lower energy tunneling regime, hydrogen desorption results from vibrational excitation of the Si-H bond at high tunneling currents. Furthermore, we find that atomic hydrogen is liberated in contrast to molecular hydrogen evolved during thermal desorption. Selective oxidation and nitridation of the STM-patterned areas has been achieved.

Recommended Citation

J. W. Lyding, T.-C. Shen, G. C. Abeln, C. Wang, E. T. Foley, and J. R. Tucker, "Silicon nanofabrication and chemical modification by UHV-STM," Mat. Res. Soc. Symp. Proc. 380, 187 (1995).