Session
Technical Session IX: Advanced Technologies & Subsystems, Components & Sensors (II)
Abstract
The Johns Hopkins University Applied Physics Laboratory (JHU/APL) has developed the first generation of a micro digital solar attitude detector (DSAD). The micro-DSAD (ìDSAD) design is based on our patented approach of combining a centroiding position-sensitive active-pixel architecture with standard imaging capability for providing optional “engineering channel” images. This approach avoids the need for a DSP (digital signal processor) in computing the position, thus dramatically lowering the required mass and power resources. The ìDSAD technology is presently at Technology Readiness Level (TRL) 5. We have demonstrated robust performance, significant total dose radiation tolerance, and single-event latchup immunity on small format prototype devices. The proposed ìDSAD realizes a significant breakthrough in meeting the requirements for the Sun sensor needed as part of ultra-low-power electronics and avionics. The ìDSAD device can also be used as an medium resolution imager for use in monitoring solar panel, boom, and antenna deployments or for sighting stars or other items of interest. Incorporating the entire sensor and its interface on a single chip enables us to create a sensor small enough to be of great utility in microsatellites for spacecraft formation flying, as well as applicability in nearly all NASA spacecraft missions.
Micro Digital Solar Attitude Detector and Imager
The Johns Hopkins University Applied Physics Laboratory (JHU/APL) has developed the first generation of a micro digital solar attitude detector (DSAD). The micro-DSAD (ìDSAD) design is based on our patented approach of combining a centroiding position-sensitive active-pixel architecture with standard imaging capability for providing optional “engineering channel” images. This approach avoids the need for a DSP (digital signal processor) in computing the position, thus dramatically lowering the required mass and power resources. The ìDSAD technology is presently at Technology Readiness Level (TRL) 5. We have demonstrated robust performance, significant total dose radiation tolerance, and single-event latchup immunity on small format prototype devices. The proposed ìDSAD realizes a significant breakthrough in meeting the requirements for the Sun sensor needed as part of ultra-low-power electronics and avionics. The ìDSAD device can also be used as an medium resolution imager for use in monitoring solar panel, boom, and antenna deployments or for sighting stars or other items of interest. Incorporating the entire sensor and its interface on a single chip enables us to create a sensor small enough to be of great utility in microsatellites for spacecraft formation flying, as well as applicability in nearly all NASA spacecraft missions.
