Radiation-Tolerant, GaN-based Point of Load Converters for Small Spacecraft Missions

Radiation-Tolerant, GaN-based Point of Load Converters for Small Spacecraft Missions

As computational loads for spacecraft continue to grow, the requirements levied on power-conversion electronics have become increasingly demanding. Designing for compute-intensive processing capabilities in the CubeSat form-factor further encourages the use of lightweight, compact, and efficient power-conversion electronics. However, the radiation-tolerant and radiation-hardened point-of-load converters available from existing vendors are large, expensive, and inefficient relative to their commercial counterparts. To alleviate this disparity, this paper presents the design, development, and testing of three radiation-tolerant, point-of-load (PoL) converters using Gallium Nitride (GaN) High-Electron Mobility Transistors (HEMT) and commercial controllers to enable the success of future small-satellite missions.